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2SK413 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
　
　
　
| Part | 2SK413 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIP TION ·Drain Current –ID= 8A@ TC=25â„ ƒ ·Drain Source Voltage-
: VDSS= 140V( Min) ·Fast Switching Speed ·100% aval anche tested ·Minimum Lot-to-Lot varia tions for robust device
performance and reliable operation
APPLICATIONS ·Hig h speed switching. ·High Cutoff freque ncy. ·No secondary breakdown. ·Suitab le for switching regulator，DC-DC conv erter, PWM amplifiers，and ultrasonic power oscillators. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0 ) 140 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuou . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK413 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIP TION ·Drain Current –ID= 8A@ TC=25â„ ƒ ·Drain Source Voltage-
: VDSS= 140V( Min) ·Fast Switching Speed ·100% aval anche tested ·Minimum Lot-to-Lot varia tions for robust device
performance and reliable operation
APPLICATIONS ·Hig h speed switching. ·High Cutoff freque ncy. ·No secondary breakdown. ·Suitab le for switching regulator，DC-DC conv erter, PWM amplifiers，and ultrasonic power oscillators. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0 ) 140 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuou . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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