2SK415

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage,high speed power Switching . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK415 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 VSD Diode Forward Voltage IF= 2A; VGS= 0 2SK415 MIN TYP. MAX UNIT 800 V 2.0 4.0 V 5.0 6.0 Ω ±1 uA 1 mA 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The produ...