INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK440
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
2SK440
DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed especially for low voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 6 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
1.67
Thermal Resistance,Junction to Ambient 62.5
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
2SK440
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= 10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID=3A
VDS(ON) Drain-Source Saturation Voltage
IF= 3A; VGS=15V
VSD Drain Forward Voltage IGSS Gate Source Leakage Current
IF= 3A; VGS=0 VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=160V; VGS= 0 tr Rise time
to...