2SK440

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK440 DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 200 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 6 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.67 Thermal Resistance,Junction to Ambient 62.5 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK440 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID=3A VDS(ON) Drain-Source Saturation Voltage IF= 3A; VGS=15V VSD Drain Forward Voltage IGSS Gate Source Leakage Current IF= 3A; VGS=0 VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=160V; VGS= 0 tr Rise time to...