Document
SANGDEST MICROELECTRONICS
HER208G
Technical Data Data Sheet N1679, Rev. -
HER208G
Green Products
HIGH EFFICIENCY RECTIFIERS
Reverse Voltage - 1000 Volts Forward Current - 2.0 Amperes
Features:
• The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 • High speed switching for high efficiency • Low reverse leakage • Glass Passivated Die Construction • High forward surge current capability • High temperature soldering guaranteed: 260℃/10 seconds, 0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data:
• Case: JEDEC DO-15 molded plastic body • Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any • Weight: 0.014 ounce, 0.40 grams
Mechanical Dimensions: In mm
DO-15
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST MICROELECTRONICS
Technical Data Data Sheet N1679, Rev. -
MARKING DIAGRAM
HER208G
Green Products
Cautions:Molding resin Epoxy resin UL:94V-0
HER208G = Part Name
ORDERING INFORMATION
Device HER208G
Package
DO-15 (Pb-Free)
Shipping 3000pcs / tape
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST MICROELECTRONICS
Technical Data Data Sheet N1679, Rev. -
Maximum Ratings:
Characteristics Repetitive Peak Reverse Voltage RMS Voltage DC Blocking Voltage
Average Forward Current
Peak One Cycle NonRepetitive Surge Current
Symbol
VRRM VRMS VDC IF (AV)
IFSM
Condition -
50% duty cycle @TA = 50℃ rectangular wave form
8.3 ms, half Sine pulse
Electrical Characteristics:
Characteristics Forward Voltage Drop
Reverse Current
Junction Capacitance Maximum reverse recovery time
Symbol VF1 IR1
IR2
CJ
Trr
Condition
@ 2.0A, Pulse, TJ = 25℃
@VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ @VRB B = 4V, TCB B = 25 °C fSIGB B = 1MHz IF=0.5A,IR=1.0A,Irr=0.25A
* Pulse width < 300 µs, duty cycle < 2%
HER208G
Green Products
Max. 1000 700 1000 2.0
60
Units V V V A
A
Typ. -
-
20
-
Max. 1.7 5
100
-
70
Units V μA
μA
pF
ns
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal Resistance Junction to Ambient Case Style
Symbol TJ Tstg RθJA
Condition -
DC operation
Specification -65 to +150 -65 to +150 50
Units ℃ ℃
℃/W
DO-15
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST MICROELECTRONICS
Technical Data Data Sheet N1679, Rev. -
HER208G
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST MICROELECTRONICS
HER208G
Technical Data Data Sheet N1679, Rev. -
Green Products
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writte.