TMPF9N50G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G VDSS = 550 V @Tjmax ID = 9A RDS(on) = 0.85 W(max) @ VGS= 10 V D G S Device TMP9N50 / TMPF9N50 TMP9N50G / TMPF9N50G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP9N50 / TMPF9N50 TMP9N50G / TMPF9N50G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP9N50(G) TMPF9N50(G) 500 ±30 9 9* 5.3 5.3 * 36 36* 364 9 14.3 143 46.6 1.16 0.37 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA July 2010 : Rev1 www.trinnotech.com TMP9N50(G) 0.87 62.5 TMPF9N50(G) 2.68 62.5 Unit ℃/W ℃/W 1/5 TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter...