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TMU8N50Z Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU8N50Z |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification
D-PA K
TMD8N50Z(G)/TMU8N50Z(G)
BVDSS 500V
N-channel MOSFET ID RDS(on) 8A <0. 85W I-PAK Device TMD8N50Z/TMU8N50Z TMD8N5 0ZG/TMU8N50ZG Package D-PAK/I-PAK D-PA K/I-PAK Absolute Maximum Ratings Para meter Drain-Source Voltage Gate-Sourc e Voltage Continuous Drain Current Puls ed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche En ergy (Note 2) Repetitive Avalanche Cur rent (Note 1) Repetitive Avalanche Ene rgy (Note 1) Power Dissipatio . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU8N50Z |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification
D-PA K
TMD8N50Z(G)/TMU8N50Z(G)
BVDSS 500V
N-channel MOSFET ID RDS(on) 8A <0. 85W I-PAK Device TMD8N50Z/TMU8N50Z TMD8N5 0ZG/TMU8N50ZG Package D-PAK/I-PAK D-PA K/I-PAK Absolute Maximum Ratings Para meter Drain-Source Voltage Gate-Sourc e Voltage Continuous Drain Current Puls ed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche En ergy (Note 2) Repetitive Avalanche Cur rent (Note 1) Repetitive Avalanche Ene rgy (Note 1) Power Dissipatio . |
| Manufacture | TRinno |
| Datasheet |
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