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TMD8N50ZG Datasheet, Equivalent, N-channel MOSFET.

N-channel MOSFET

N-channel MOSFET

 

 

 

Part TMD8N50ZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification D-PA K TMD8N50Z(G)/TMU8N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8A <0.
85W I-PAK Device TMD8N50Z/TMU8N50Z TMD8N5 0ZG/TMU8N50ZG Package D-PAK/I-PAK D-PA K/I-PAK Absolute Maximum Ratings Para meter Drain-Source Voltage Gate-Sourc e Voltage Continuous Drain Current Puls ed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche En ergy (Note 2) Repetitive Avalanche Cur rent (Note 1) Repetitive Avalanche Ene rgy (Note 1) Power Dissipatio .
Manufacture TRinno
Datasheet
Download TMD8N50ZG Datasheet
Part TMD8N50ZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification D-PA K TMD8N50Z(G)/TMU8N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8A <0.
85W I-PAK Device TMD8N50Z/TMU8N50Z TMD8N5 0ZG/TMU8N50ZG Package D-PAK/I-PAK D-PA K/I-PAK Absolute Maximum Ratings Para meter Drain-Source Voltage Gate-Sourc e Voltage Continuous Drain Current Puls ed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche En ergy (Note 2) Repetitive Avalanche Cur rent (Note 1) Repetitive Avalanche Ene rgy (Note 1) Power Dissipatio .
Manufacture TRinno
Datasheet
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TMD8N50ZG

TMD8N50ZG
TMD8N50ZG

TMD8N50ZG

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