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TMP830ZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMP830ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP830Z(G)/TMPF830Z(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
4. 5A <1. 5W Device TMP830Z / TMPF830Z TMP830ZG / TMPF830ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipat. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMP830ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP830Z(G)/TMPF830Z(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
4. 5A <1. 5W Device TMP830Z / TMPF830Z TMP830ZG / TMPF830ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipat. |
| Manufacture | TRinno |
| Datasheet |
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