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TMU830AZ Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU830AZ |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
TMD830AZ(G)/TMU830AZ(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
4. 5A < 1. 5W I-PAK Device TMD830AZ / TMU830AZ TMD830AZG / TMU830AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanc. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU830AZ |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
TMD830AZ(G)/TMU830AZ(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
4. 5A < 1. 5W I-PAK Device TMD830AZ / TMU830AZ TMD830AZG / TMU830AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanc. |
| Manufacture | TRinno |
| Datasheet |
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