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TMU830AZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU830AZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification Improved ESD performance
D-PAK
TMD830A Z(G)/TMU830AZ(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
4. 5A < 1. 5W I-PA K Device TMD830AZ / TMU830AZ TMD830AZG / TMU830AZG Package D-PAK/I-PAK D-PAK /I-PAK Absolute Maximum Ratings Param eter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse d Drain Current (Note 1) TC = 25 ℃ T C = 100 ℃ Single Pulse Avalanche Ene rgy (Note 2) Repetitive Avalanche Curr ent (Note 1) Repetitive Avalanc . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU830AZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification Improved ESD performance
D-PAK
TMD830A Z(G)/TMU830AZ(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
4. 5A < 1. 5W I-PA K Device TMD830AZ / TMU830AZ TMD830AZG / TMU830AZG Package D-PAK/I-PAK D-PAK /I-PAK Absolute Maximum Ratings Param eter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse d Drain Current (Note 1) TC = 25 ℃ T C = 100 ℃ Single Pulse Avalanche Ene rgy (Note 2) Repetitive Avalanche Curr ent (Note 1) Repetitive Avalanc . |
| Manufacture | TRinno |
| Datasheet |
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