TMP5N50

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V D G Device TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP5N50(G) TMPF5N50(G) 500 ±30 4.5 4.5 * 2.86 2.86 * 18 18* 240 4.5 9.25 92.5 32 0.74 0.25 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Symbol Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient RqJC RqJA August 2010 : Rev1 www.trinnotech.com TMP5N50(G) 1.35 62.5 TMPF5N50(G) 3.9 62.5 Unit ℃/W ℃/W 1/5 TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G Electrical Characteristics : TC=2...