Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
TMP3N50Z(G)/TMPF3N50Z(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
2.5A
< 2.8W
Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP3N50Z(G)
TMPF3N50Z(G)
500
±30
2.5 2.5 *
1.8 1.8 *
10 10 *
107
2.5
5.21
52.1 17.3
0.41 0.13
4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
November 2012 : Rev0
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TMP3N50Z(G) 2.4 62.5
TMPF3N50Z(G) 7.2 62.5
Unit ℃/W ℃/W
1/7
TMP3N50Z(G)/TMPF3N50Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 500 --
--
V
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
IDSS
VDS = 400 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 1.25 A
--
2.3 2.8
W
gFS
VDS = 30 V, ID = 1.25 A
--
5
--
S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 395 --- 44 --- 8 --
pF pF pF
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on)
VDD = 300 V, ID = 2.5 A,
--
16
--
ns
tr RG = 25 Ω, VGS = 10 V -- 19 -- ns
td(off)
-- 62 -- ns
tf -- 18 -- ns
Qg
VDS = 400 V, ID = 2.5 A,
--
9
-- nC
Qgs
VGS = 10 V
-- 2 -- nC
Qgd -- 4 -- nC
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 2.5 A VGS = 0 V, IS = 2.5 A dIF / dt = 100 A/µs
-- -- 2.5 A
-- -- 10 A
-- -- 1.5 V
-- 230 --
ns
-- 0.9 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=30.9mH, I AS = 2.5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 2.5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
November 2012 : Rev0
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Drain Current, I [A] D
6
Top V =15.0V GS
10.0V
9.0V
8.0V
7.0V
4
6.0V 5.5V
5.0V
Bottom 4.5V
2
1. T = 25℃ C
2. 250μs Pulse Test
0 0 6 12 18 24
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
TMP3N50Z(G)/TMPF3N50Z(G)
V = 30V DS
250 μs Pulse Test
10
150℃ 1 25℃
-55℃
0.1 2 4 6 8 10
Gate-Source Voltage, V [V] GS
Drain-Source On-Resistance R [Ω]
DS(ON)
6
T = 25℃ J
5
4
3
2
1 02
V = 10V GS
V = 20V GS
4
Drain Current,I [A] D
6
8
Reverse Drain Current, I [A] DR
10
V = 0V GS
250μs Pulse Test
8
6
150℃
25℃
4
2
0 0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V] SD
2.0
Capacitance [pF]
Gate-Source Voltage, V [V] GS
800
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
12 I = 2.5A
D
10
600
V =0V
V = 250V DS
GS
f = 1 MHz
C iss
8
V = 100V DS
400 6 V = 400V DS
C oss
4
200 C
rss
2
0 10-1 100 101
Drain-Source Voltage, V [V] DS
November 2012 : Rev0
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Total Gate Charge, Q [nC] G
10
3/7
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
TMP3N50Z(G)/TMPF3N50Z(G)
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
3.0
V = 10 V GS
I = 1.25 A 2.5 D
2.0
1.5
1.0
0.5
0.0 -80
-40 0 40 80 120
Junction Temperature, T [oC] J
160
3 1.5
Gate Threshold Voltage V , (Normalized)
TH
Drain Current, I [A] D
2 1.0
1 0.5
V =V DS GS
I = 250 A
D
0 0.0
25
5.