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TMP3N50Z Dataheets PDF



Part Number TMP3N50Z
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMP3N50Z DatasheetTMP3N50Z Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP3N50Z(G)/TMPF3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 .

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP3N50Z(G)/TMPF3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP3N50Z(G) TMPF3N50Z(G) 500 ±30 2.5 2.5 * 1.8 1.8 * 10 10 * 107 2.5 5.21 52.1 17.3 0.41 0.13 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA November 2012 : Rev0 www.trinnotech.com TMP3N50Z(G) 2.4 62.5 TMPF3N50Z(G) 7.2 62.5 Unit ℃/W ℃/W 1/7 TMP3N50Z(G)/TMPF3N50Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 500 -- -- V Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- IDSS VDS = 400 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V RDS(on) VGS = 10 V, ID = 1.25 A -- 2.3 2.8 W gFS VDS = 30 V, ID = 1.25 A -- 5 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 395 --- 44 --- 8 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) VDD = 300 V, ID = 2.5 A, -- 16 -- ns tr RG = 25 Ω, VGS = 10 V -- 19 -- ns td(off) -- 62 -- ns tf -- 18 -- ns Qg VDS = 400 V, ID = 2.5 A, -- 9 -- nC Qgs VGS = 10 V -- 2 -- nC Qgd -- 4 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 2.5 A VGS = 0 V, IS = 2.5 A dIF / dt = 100 A/µs -- -- 2.5 A -- -- 10 A -- -- 1.5 V -- 230 -- ns -- 0.9 -- µC Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=30.9mH, I AS = 2.5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 2.5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics November 2012 : Rev0 www.trinnotech.com 2/7 Drain Current, I [A] D 6 Top V =15.0V GS 10.0V 9.0V 8.0V 7.0V 4 6.0V 5.5V 5.0V Bottom 4.5V 2 1. T = 25℃ C 2. 250μs Pulse Test 0 0 6 12 18 24 Drain-Source Voltage, V [V] DS Drain Current, I [A] D TMP3N50Z(G)/TMPF3N50Z(G) V = 30V DS 250 μs Pulse Test 10 150℃ 1 25℃ -55℃ 0.1 2 4 6 8 10 Gate-Source Voltage, V [V] GS Drain-Source On-Resistance R [Ω] DS(ON) 6 T = 25℃ J 5 4 3 2 1 02 V = 10V GS V = 20V GS 4 Drain Current,I [A] D 6 8 Reverse Drain Current, I [A] DR 10 V = 0V GS 250μs Pulse Test 8 6 150℃ 25℃ 4 2 0 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 2.0 Capacitance [pF] Gate-Source Voltage, V [V] GS 800 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd 12 I = 2.5A D 10 600 V =0V V = 250V DS GS f = 1 MHz C iss 8 V = 100V DS 400 6 V = 400V DS C oss 4 200 C rss 2 0 10-1 100 101 Drain-Source Voltage, V [V] DS November 2012 : Rev0 0 0 www.trinnotech.com 2468 Total Gate Charge, Q [nC] G 10 3/7 Drain-Source Breakdown Voltage BV , (Normalized) DSS TMP3N50Z(G)/TMPF3N50Z(G) 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) 3.0 V = 10 V GS I = 1.25 A 2.5 D 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 3 1.5 Gate Threshold Voltage V , (Normalized) TH Drain Current, I [A] D 2 1.0 1 0.5 V =V DS GS I = 250  A D 0 0.0 25 5.


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