DatasheetsPDF.com

TMD3N50ZG Data Sheet

N-channel MOSFET

Download TMD3N50ZG Datasheet

TMD3N50ZG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A <2.8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG Package D-PAK/I.

TMD3N50ZG

Download TMD3N50ZG Datasheet

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A <2.8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature.




Previous TMD3N50ZG Next

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)