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TMD3N50ZG Datasheet, Equivalent, N-channel MOSFET.

N-channel MOSFET

N-channel MOSFET

 

 

 

Part TMD3N50ZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification D-PA K TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.
5A <2 .
8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG Package D-PAK/I- PAK D-PAK/I-PAK Absolute Maximum Ratin gs Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Aval anche Energy (Note 2) Repetitive Avala nche Current (Note 1) Repetitive Avala nche Energy (Note 1) Power Di .
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Datasheet
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Part TMD3N50ZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification D-PA K TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.
5A <2 .
8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG Package D-PAK/I- PAK D-PAK/I-PAK Absolute Maximum Ratin gs Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Aval anche Energy (Note 2) Repetitive Avala nche Current (Note 1) Repetitive Avala nche Energy (Note 1) Power Di .
Manufacture TRinno
Datasheet
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TMD3N50ZG

TMD3N50ZG
TMD3N50ZG

TMD3N50ZG

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