N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability Halogen free package JEDEC Qualificat...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD5N40ZG/TMU5N40ZG
Package D-PAK/I-PAK
TMD5N40ZG/TMU5N40ZG
VDSS = 440 V @Tjmax ID = 3.4A RDS(on) = 1.6 W(max) @ VGS= 10 V
I-PAK
D
G
S
Marking TMD5N40ZG/TMU5N40ZG
Remark Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1) Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
August 2011 : Rev0
www.trinnotech.com
TMD5N40ZG/TMU5N40ZG 400 ±30 3.4* 2.15* 13.6* 165 3.4 5.0 50 0.4 4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
TMD5N40ZG/TMU5N40ZG 2.5 110
Unit ℃/W ℃/W
1/6
TMD5N40ZG/TMU5N40ZG
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward Gate-Sou...
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