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TMD5N40ZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMD5N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility Halogen free package JEDE C Qualification Improved ESD perfor mance
D-PAK
Device TMD5N40ZG/TMU5N40ZG
Package D-PAK/I-PAK
TMD5N40ZG/TMU5N4 0ZG
VDSS = 440 V @Tjmax ID = 3. 4A RDS(o n) = 1. 6 W(max) @ VGS= 10 V I-PAK D G S Marking TMD5N40ZG/TMU5N40ZG Rema rk Halogen Free Absolute Maximum Ratin gs Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Aval anche Energy (Note 2) Repetitive Avala nche Current (Note 1) Repetit . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMD5N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility Halogen free package JEDE C Qualification Improved ESD perfor mance
D-PAK
Device TMD5N40ZG/TMU5N40ZG
Package D-PAK/I-PAK
TMD5N40ZG/TMU5N4 0ZG
VDSS = 440 V @Tjmax ID = 3. 4A RDS(o n) = 1. 6 W(max) @ VGS= 10 V I-PAK D G S Marking TMD5N40ZG/TMU5N40ZG Rema rk Halogen Free Absolute Maximum Ratin gs Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Aval anche Energy (Note 2) Repetitive Avala nche Current (Note 1) Repetit . |
| Manufacture | TRinno |
| Datasheet |
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