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TMD3N40ZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMD3N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD3N40ZG/TMU3N40ZG
Package D-PAK/I-PA K
TMD3N40ZG/TMU3N40ZG
VDSS = 440 V @Tj max ID = 2A RDS(on) = 3. 4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TM U3N40ZG S Remark Halogen Free Absolut e Maximum Ratings Parameter Drain-Sou rce Voltage Gate-Source Voltage Contin uous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Si ngle Pulse Avalanche Energy (Note 2) R epetitive Avalanche Current (Not . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMD3N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD3N40ZG/TMU3N40ZG
Package D-PAK/I-PA K
TMD3N40ZG/TMU3N40ZG
VDSS = 440 V @Tj max ID = 2A RDS(on) = 3. 4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TM U3N40ZG S Remark Halogen Free Absolut e Maximum Ratings Parameter Drain-Sou rce Voltage Gate-Source Voltage Contin uous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Si ngle Pulse Avalanche Energy (Note 2) R epetitive Avalanche Current (Not . |
| Manufacture | TRinno |
| Datasheet |
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