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TMT3N40ZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMT3N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | TMT3N40ZG
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualifi cation Improved ESD performance
Dev ice TMT3N40ZG
D
Package SOT-223
VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3. 4 W( max) @ VGS= 10 V S D G G Marking TMT3 N40ZG D S Remark Halogen Free Absolut e Maximum Ratings Parameter Drain-Sou rce Voltage Gate-Source Voltage Contin uous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Si ngle Pulse Avalanche Energy (Note 2) R epetitive Avalanche Current (Note 1) R epetitive Avalanche Energy (Note . |
| Manufacture | TRinno |
| Datasheet |
| Part | TMT3N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | TMT3N40ZG
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualifi cation Improved ESD performance
Dev ice TMT3N40ZG
D
Package SOT-223
VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3. 4 W( max) @ VGS= 10 V S D G G Marking TMT3 N40ZG D S Remark Halogen Free Absolut e Maximum Ratings Parameter Drain-Sou rce Voltage Gate-Source Voltage Contin uous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Si ngle Pulse Avalanche Energy (Note 2) R epetitive Avalanche Current (Note 1) R epetitive Avalanche Energy (Note . |
| Manufacture | TRinno |
| Datasheet |
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