TMT3N40ZG

TMT3N40ZG Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device TMT3N40ZG D Package SOT-223 VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.4 W(max) @ VGS= 10 V S D G G Marking TMT3N40ZG D S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Ambient Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Symbol RqJA July 2011 : Rev0 www.trinnotech.com TMT3N40ZG 400 ±30 2.0* 1.2* 8* 46 2 0.2 2 0.24 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMT3N40ZG 62.5 Unit ℃/W 1/4 TMT3N40ZG Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 mA 400 -- -- V Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- IDSS VDS = 320 V, TC = 125°C -- -- 1 mA --...