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TMPF16N25ZG Dataheets PDF



Part Number TMPF16N25ZG
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF16N25ZG DatasheetTMPF16N25ZG Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N25Z(G)/TMPF16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.24W Device TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N25Z(G)/TMPF16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.24W Device TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP16N25Z(G) TMPF16N25Z(G) 250 ±30 16 16 * 8.3 8.3 * 64 64 * 368 16 9.39 93.9 30.4 0.75 0.24 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP16N25Z(G) 1.33 62.5 June 2012 : Rev0 www.trinnotech.com TMPF16N25Z(G) 4.1 62.5 Unit ℃/W ℃/W 1/7 TMP16N25Z(G)/TMPF16N25Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 250 -- -- V Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- IDSS VDS = 200 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 3 -- 5 V RDS(on) VGS = 10 V, ID = 8 A -- 0.2 0.24 W gFS VDS = 30 V, ID = 8 A -- 6.5 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 944 --- 152 --- 16 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) VDD = 125 V, ID = 16 A, -- 26 -- ns tr RG = 25 Ω -- 51 -- ns td(off) -- 61 -- ns tf -- 23 -- ns Qg VDS = 200 V, ID = 16 A, -- 19 -- nC Qgs VGS = 10 V -- 5 -- nC Qgd -- 9 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 16 A VGS = 0 V, IS = 16 A dIF / dt = 100 A/µs -- -- 16 A -- -- 64 A -- -- 1.5 V -- 188 -- ns -- 1 -- µC Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=2.3mH, I AS = 16A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 16A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics June 2012 : Rev0 www.trinnotech.com 2/7 TMP16N25Z(G)/TMPF16N25Z(G) Drain Current, I [A] D 50 Top V =15.0V GS 10.0V 40 9.0V 8.0V 7.0V Bottom 6.0V 30 20 10 1. T = 25℃ C 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS Drain Current, I [A] D V = 30V DS 250 μs Pulse Test 150℃ 10 25℃ 1 -55℃ 0.1 2 4 6 8 10 Gate-Source Voltage, V [V] GS 12 0.8 T = 25℃ J 0.6 0.4 0.2 0.0 0 10 V = 10V GS V = 20V GS 20 30 Drain Current,I [A] D 40 50 Reverse Drain Current, I [A] DR 60 V = 0V GS 250μs Pulse Test 50 40 30 150℃ 25℃ 20 10 0 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 2.0 Drain-Source On-Resistance R [Ω] DS(ON) Capacitance [pF] Gate-Source Voltage, V [V] GS 2000 1500 1000 500 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd V =0V GS f = 1 MHz C iss C oss C rss 12 I = 16A D 10 8 6 4 2 0 10-1 100 101 Drain-Source Voltage, V [V] DS June 2012 : Rev0 0 0 www.trinnotech.com V = 125V DS V = 50V DS V = 200V DS 5 10 15 Total Gate Charge, Q [nC] G 20 3/7 Drain-Source Breakdown Voltage BV , (Normalized) DSS TMP16N25Z(G)/TMPF16N25Z(G) 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) 3.0 V = 10 V GS I =8A D 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 18 1.5 Gate Threshold Voltage V , (Normalized) TH Drain Current, I [A] D 12 1.0 6 0.5 V =V DS GS I = 250  A D 0 0.0 25 50 75 100 125 150 -80 -40 0 40 80 120 160 Case Temperature, T .


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