Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP16N25Z(G)/TMPF16N25Z(G)
BVDSS 250V
N-channel MOSFET ID RDS(on) 16A <0.24W
Device TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP16N25Z(G) TMPF16N25Z(G) 250 ±30
16 16 * 8.3 8.3 * 64 64 *
368 16 9.39 93.9 30.4 0.75 0.24 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP16N25Z(G) 1.33 62.5
June 2012 : Rev0
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TMPF16N25Z(G) 4.1 62.5
Unit ℃/W ℃/W
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TMP16N25Z(G)/TMPF16N25Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 250 --
--
V
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
--
IDSS
VDS = 200 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 8 A
--
0.2 0.24
W
gFS
VDS = 30 V, ID = 8 A
-- 6.5 --
S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 944 --- 152 --- 16 --
pF pF pF
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on)
VDD = 125 V, ID = 16 A,
--
26
--
ns
tr
RG = 25 Ω
-- 51 -- ns
td(off)
-- 61 -- ns
tf -- 23 -- ns
Qg VDS = 200 V, ID = 16 A, -- 19 -- nC
Qgs
VGS = 10 V
-- 5 -- nC
Qgd -- 9 -- nC
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 16 A VGS = 0 V, IS = 16 A dIF / dt = 100 A/µs
-- -- 16 A
-- -- 64 A
-- -- 1.5 V
-- 188 --
ns
-- 1 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=2.3mH, I AS = 16A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 16A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
June 2012 : Rev0
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TMP16N25Z(G)/TMPF16N25Z(G)
Drain Current, I [A] D
50
Top V =15.0V GS 10.0V
40 9.0V 8.0V 7.0V
Bottom 6.0V 30
20
10 1. T = 25℃
C
2. 250μs Pulse Test
0 0 5 10 15 20
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
V = 30V DS
250 μs Pulse Test
150℃ 10
25℃
1
-55℃
0.1 2 4 6 8 10
Gate-Source Voltage, V [V] GS
12
0.8
T = 25℃ J
0.6
0.4
0.2
0.0 0
10
V = 10V GS
V = 20V GS
20 30
Drain Current,I [A] D
40
50
Reverse Drain Current, I [A] DR
60
V = 0V GS
250μs Pulse Test
50
40
30
150℃
25℃
20
10
0 0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V] SD
2.0
Drain-Source On-Resistance R [Ω]
DS(ON)
Capacitance [pF]
Gate-Source Voltage, V [V] GS
2000 1500 1000
500
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd V =0V GS f = 1 MHz
C iss
C oss
C rss
12 I = 16A
D
10
8
6
4
2
0 10-1 100 101
Drain-Source Voltage, V [V] DS
June 2012 : Rev0
0 0
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V = 125V DS
V = 50V DS
V = 200V DS
5 10 15
Total Gate Charge, Q [nC] G
20
3/7
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
TMP16N25Z(G)/TMPF16N25Z(G)
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
3.0
V = 10 V GS
I =8A
D
2.5
2.0
1.5
1.0
0.5
0.0 -80
-40 0 40 80 120
Junction Temperature, T [oC] J
160
18 1.5
Gate Threshold Voltage V , (Normalized)
TH
Drain Current, I [A] D
12 1.0
6 0.5
V =V DS GS
I = 250 A
D
0 0.0
25 50 75 100 125 150 -80 -40 0 40 80 120 160
Case Temperature, T .