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TMU16N25ZG Datasheet, Equivalent, N-channel MOSFET.

N-channel MOSFET

N-channel MOSFET

 

 

 

Part TMU16N25ZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification D-PA K TMD16N25Z(G)/TMU16N25Z(G) BVDSS 250 V N-channel MOSFET ID RDS(on) 16A <0.
2 4W I-PAK Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG Package D-PAK /I-PAK D-PAK/I-PAK Absolute Maximum Ra tings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C urrent Pulsed Drain Current (Note 1) T C = 25 ℃ TC = 100 ℃ Single Pulse A valanche Energy (Note 2) Repetitive Av alanche Current (Note 1) Repetitive Av alanche Energy (Note 1) Power .
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Datasheet
Download TMU16N25ZG Datasheet
Part TMU16N25ZG
Description N-channel MOSFET
Feature Features  Low gate charge  100% av alanche tested  Improved dv/dt capab ility  RoHS compliant  Halogen fr ee package  JEDEC Qualification D-PA K TMD16N25Z(G)/TMU16N25Z(G) BVDSS 250 V N-channel MOSFET ID RDS(on) 16A <0.
2 4W I-PAK Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG Package D-PAK /I-PAK D-PAK/I-PAK Absolute Maximum Ra tings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C urrent Pulsed Drain Current (Note 1) T C = 25 ℃ TC = 100 ℃ Single Pulse A valanche Energy (Note 2) Repetitive Av alanche Current (Note 1) Repetitive Av alanche Energy (Note 1) Power .
Manufacture TRinno
Datasheet
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TMU16N25ZG

TMU16N25ZG
TMU16N25ZG

TMU16N25ZG

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