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TMU8N25ZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU8N25ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TMD8N25Z(G)/TMU8N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on)MAX 8A <0.6W I-PAK Device TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipat. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU8N25ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TMD8N25Z(G)/TMU8N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on)MAX 8A <0.6W I-PAK Device TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipat. |
| Manufacture | TRinno |
| Datasheet |
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