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TMD630Z Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
Part | TMD630Z |
---|---|
Description | N-channel MOSFET |
Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification
D-PA K
TMD630Z(G)/TMU630Z(G)
BVDSS 200V
N -channel MOSFET ID RDS(on)MAX 9A <0. 4W I-PAK Device TMD630Z/TMU630Z TMD630ZG /TMD630ZG Package D-PAK/I-PAK D-PAK/I- PAK Absolute Maximum Ratings Paramete r Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current Pulsed D rain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation T . |
Manufacture | TRinno |
Datasheet |
Part | TMD630Z |
---|---|
Description | N-channel MOSFET |
Feature | Features Low gate charge 100% av alanche tested Improved dv/dt capab ility RoHS compliant Halogen fr ee package JEDEC Qualification
D-PA K
TMD630Z(G)/TMU630Z(G)
BVDSS 200V
N -channel MOSFET ID RDS(on)MAX 9A <0. 4W I-PAK Device TMD630Z/TMU630Z TMD630ZG /TMD630ZG Package D-PAK/I-PAK D-PAK/I- PAK Absolute Maximum Ratings Paramete r Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current Pulsed D rain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation T . |
Manufacture | TRinno |
Datasheet |
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