TGAN30N60FDR

Features: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5μs RoHS Compliant JEDEC Qualification Applications : UPS, Welder, Inverter, Solar TGAN30N60FDR Field Stop Trench IGBT E GC Device TGAN30N60FDR Package TO-3PN Marking TGAN30N60FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF PD TJ TSTG TL Value 600 ±20 60 30 90 30 231 93 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.54 1.12 40 Nov. 2014. Rev 0.0 www.trinnotech.com Remark RoHS Unit V V A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN30N60FDR Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector ...