Field Stop Trench IGBT
TGD30N40P
Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Description
TGD30N40P
Features: 400V Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification
Applications : Plasma Display Panel, Soft switching application,
D-PAK C
GE
Device TGD30N40P
Package D-PAK
Packaging type Reel
Marking TGD30N40P
Remark RoHS
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM
PD
TJ TSTG TL
Value 400 ±30 60 30 300 56.8 22.7 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Unit V V A A A W W ℃ ℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RθJC RθJA
August. 2012 : Rev0
www.trinnotech.com
Value 2.2 110
Unit ℃/W ℃/W
1/6
TGD30N40P
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current
BVCES ICES IGES
VGE = 0V, IC = 1mA VCE = 400V, VGE = 0V VCE = 0V, VGE = ±30V
400 --
--
V
-- -- 100 µA
...
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