Field Stop Trench IGBT
TGPF30N40P
Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeff...
Description
TGPF30N40P
Features: 400V Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification
Applications :
Plasma Display Panel, Soft switching application,
C GCE
Ordering Part Number TGPF30N40P
TGPF30N40P-R TGPF30N40P-L
Package TO-220F TO-220F(R-Forming) TO-220F(L-Forming)
Packaging type Tube Tube Tube
Marking TGPF30N40P TGPF30N40P TGPF30N40P
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM
PD
TJ TSTG TL
Value 400 ±30 60 30 300 20.8 8.3 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Remark RoHS RoHS RoHS
Unit V V A A A W W ℃ ℃ ℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RθJC RθJA
August. 2012 : Rev0
www.trinnotech.com
Value 6.0 62.5
Unit ℃/W ℃/W
1/6
TGPF30N40P
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leaka...
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