NT5CB64M16DP

1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature  1.5V ± 0.075V & 1.35V -0.067/+0.1V (JEDEC Standard Power Supply)  VDD= VDDQ= 1.35V (1.283~1.45V ) Backward compatible to VDD= VDDQ= 1.5V ±0.075V Supports DDR3L devices to be backward compatible in 1.5V applications  The timing specification of high speed bin is backward compatible with low speed bin  8 Internal memory banks (BA0- BA2)  Differential clock input (CK, )  Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13, (14)  POSTED CAS ADDITIVE Programmable Additive Latency: 0, CL-1, CL-2  Programmable Sequential / Interleave Burst Type  Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)  Auto Self-Refresh  Self-Refresh Temperature  RoHS Compliance  Lead-Free and Halogen-Free  Packages: 78-Ball BGA for x8 components 96-Ball BGA for x16 components  Operation Temperture Commerical grade (0℃≦TC≦95℃) - BE, CF, DH, EJ, FK Industial grade (-40℃≦TC≦95℃) - CFI, DHI DCC Version 1.1 01/ 2014 1 © NANYA TECHNOLOGY CORP. All rights reserved NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Table 1: CAS Latency Frequency -BE* -CF/CFI* Speed Bins DDR3/L-1066 DDR3/L-1333 CL7 CL8 Parameter Clock Frequency Min. 30...