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NT5CB64M16DP Datasheet, Equivalent, DDR3 SDRAM.1Gb DDR3 SDRAM 1Gb DDR3 SDRAM |
| Part | NT5CB64M16DP |
|---|---|
| Description | 1Gb DDR3 SDRAM |
| Feature | 1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16 DP NT5CC128M8DN / NT5CC64M16DP
Feature
1. 5V ± 0. 075V & 1. 35V -0. 067/+0. 1V (JEDEC Standard Power Supply) VDD= VDDQ= 1. 35V (1. 283~1. 45V ) Backward co mpatible to VDD= VDDQ= 1. 5V ±0. 075V Su pports DDR3L devices to be backward com patible in 1. 5V applications The ti ming specification of high speed bin is backward compatible with low speed bin 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latenc y: 5, 6, 7, 8, 9, 10, 11, 12, 13, (14) POSTED CAS ADDITIVE Programmable Ad ditive Latency: 0, CL-1, CL-2 Progr ammab . |
| Manufacture | Nanya |
| Datasheet |
| Part | NT5CB64M16DP |
|---|---|
| Description | 1Gb DDR3 SDRAM |
| Feature | 1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16 DP NT5CC128M8DN / NT5CC64M16DP
Feature
1. 5V ± 0. 075V & 1. 35V -0. 067/+0. 1V (JEDEC Standard Power Supply) VDD= VDDQ= 1. 35V (1. 283~1. 45V ) Backward co mpatible to VDD= VDDQ= 1. 5V ±0. 075V Su pports DDR3L devices to be backward com patible in 1. 5V applications The ti ming specification of high speed bin is backward compatible with low speed bin 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latenc y: 5, 6, 7, 8, 9, 10, 11, 12, 13, (14) POSTED CAS ADDITIVE Programmable Ad ditive Latency: 0, CL-1, CL-2 Progr ammab . |
| Manufacture | Nanya |
| Datasheet |
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