CMXT2222A SURFACE MOUNT
DUAL NPN SILICON TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The ...
CMXT2222A SURFACE MOUNT
DUAL
NPN SILICON
TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual
NPN silicon
transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications.
MARKING CODE: X1P
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD TJ, Tstg ΘJA
75 40 6.0 600 350 -65 to +150 357
UNITS V V V mA
mW °C °C/W
ELECTRICAL CHARACTERISTICS PER
TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE fT Cob Cib hie hie
VCB=60V VCB=60V, TA=125°C VCE=60V, VEB=3.0V VEB=3.0V IC=10μA IC=10mA IE=10μA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz
75 40 6.0
0.6
35 50 75 100 50 40 300
2.0 0.25
10 10 10 10
0.3 1.0 1.2 2.0
300
8.0 25 8.0 1.25
UNITS nA μA nA nA V V V V V V V
MHz pF pF kΩ kΩ
R3 (12-February 2010)
CMXT2222A
SURFACE MOUNT...