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CMXT2907A SURFACE MOUNT
DUAL PNP SILICON TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2907A type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications.
MARKING CODE: X2F
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
60 60 5.0 600 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib ton td tr toff ts tf
VCB=50V VCB=50V, TA=125°C VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA
60 60 5.0
75 100 100 100 50 200
45 10 40
10 10 50
0.4 1.6 1.3 2.6
300
8.0 30 ns ns ns 100 80 30
UNITS V V V mA
mW °C °C/W
UNITS nA µA nA V V V V V V V
MHz pF pF
ns ns ns
R3 (12-February 2010)
CMXT2907A SURFACE MOUNT
DUAL PNP SILICON TRANSISTORS
SOT-26 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X2F
w w w. c e n t r a l s e m i . c o m
R3 (12-February 2010)
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