N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS20N65H
MAIN CHARACTERISTICS
Package
ID 20A VDSS 650 V Rdson(@Vgs=10V) 0.43 Ω Qg 50nC
z ...
Description
N R N-CHANNEL MOSFET
JCS20N65H
MAIN CHARACTERISTICS
Package
ID 20A VDSS 650 V Rdson(@Vgs=10V) 0.43 Ω Qg 50nC
z z z LED
APPLICATIONS z High frequency switching
mode power supply z Electronic ballast z LED power supply
z z Crss ( 85pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 85pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
Package
Halogen
Free
JCS20N65WH-O-W-N-B JCS20N65WH TO-247 NO
JCS20N65FH-O-F-N-B JCS20N65FH TO-220MF NO
Packaging
Tube Tube
Device Weight 5.20 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
JCS20N65H
Parameter
Symbol
Value
JCS20N65WH JCS20N65FH
- Drain-Source Voltage
VDSS
650
Drain Current -continuous
ID T=25℃ T=100℃
20 12.5
( 1) Drain Current – pulse(note 1)
IDM
80
Gate-Source Voltage
VGSS
±30
( 2) Single Pulsed Avalanche
Energy(note
2)EAS
108
( 1) Avalanche Current(note 1)
IAR
20
( 1) Repetitive Avalanche
Energy (note 1) EAR
20.7
( 3) Peak Diode Recovery dv/dt(note 3)
dv/dt
50
Power Dissipation
PD TC=25℃ -Derate above 25℃
272 2.17
55 0.31
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
* *Drain current limited by maximum junction temperature
300
Unit V A A A V mJ A mJ V/ns W
W/℃
℃
℃
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Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
-...
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