K1305

2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 100 ±20 10 40 10 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1305 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.0 — — Forward transfer admittance |yfs| 4.5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1. Pulse test Typ Max Unit ——V ——V — ±10 µA — 250 µA — 2.0 V 0.20 0.25 Ω...