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2N65 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2N65 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel MOS FET Transistor
isc Product Specificati on
2N65
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5. 0Ω(Max) · Fast Switching ·APPLICATIONS ·Switchi ng power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 ±3 0 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 54 W T j Max. Operating Junction Temp . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2N65 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel MOS FET Transistor
isc Product Specificati on
2N65
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5. 0Ω(Max) · Fast Switching ·APPLICATIONS ·Switchi ng power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 ±3 0 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 54 W T j Max. Operating Junction Temp . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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