2N65

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 ±30 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2.32 ℃/W 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage VDS= VGS; ID=250µA IS= 2A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 1A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=650V; VGS= 0 MIN TYPE MAX UNIT 650 V 2.0 4.0 V 1.4 V 5.0 Ω ±100 nA 10 µA · isc website：www.iscsemi.com 2 isc & iscsemi is re...