MOSFET Transistor. 2N65 Datasheet

2N65 Transistor. Datasheet pdf. Equivalent


Part 2N65
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·D.
Manufacture Inchange Semiconductor
Datasheet
Download 2N65 Datasheet


UNISONIC TECHNOLOGIES CO., LTD 2N65 2A, 650V N-CHANNEL POWER 2N65 Datasheet
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc 2N65 Datasheet
2N65 Datasheet
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2N65
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N65
·FEATURES
·Drain Current ID= 2A@ TC=25
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 5.0Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
±30
V
V
ID Drain Current-Continuous
2A
IDM Drain Current-Single Plused
8A
PD Total Dissipation @TC=25
54 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.32 /W
62.5 /W
isc websitewww.iscsemi.com
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2N65
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N65
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
VDS= VGS; ID=250µA
IS= 2A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 1A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=650V; VGS= 0
MIN TYPE MAX UNIT
650 V
2.0 4.0 V
1.4 V
5.0 Ω
±100 nA
10 µA
·
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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