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12N60 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | 12N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel Mosfet Transistor
12N60
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS = 600V (Min) ·Static Drain-Source On-R esistance
: RDS(on) = 0. 7Ω(Max) ·Aval anche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION ·Designed for high efficien cy switch mode power supply. ·ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VDSS Drain-Sourc e Voltage 600 V VGS Gate-Source Vol tage-Continuous ±30 V ID Drain Cur rent-Continuous 12 A IDM Drai . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 12N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel Mosfet Transistor
12N60
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS = 600V (Min) ·Static Drain-Source On-R esistance
: RDS(on) = 0. 7Ω(Max) ·Aval anche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION ·Designed for high efficien cy switch mode power supply. ·ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VDSS Drain-Sourc e Voltage 600 V VGS Gate-Source Vol tage-Continuous ±30 V ID Drain Cur rent-Continuous 12 A IDM Drai . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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