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12N65 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
　
　
　
| Part | 12N65 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel Mos fet Transistor
isc Product Specificati on
12N65
·FEATURES ·Drain Current †“ID= 12A@ TC=25℃ ·Drain Source Volta ge-
: VDSS= 650V (Min) ·Static Drain-S ource On-Resistance
: RDS(on) = 0. 85Ω( Max) ·Avalanche Energy Specified ·Fas t Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi ciency switch mode power supply. ·ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Dra in-Source Voltage Gate-Source Voltage-C ontinuous 650 ±30 V V ID Drain Curr ent-Continuous 12 A IDM Drain Current -Single Plused 48 A PD Total D . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 12N65 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel Mos fet Transistor
isc Product Specificati on
12N65
·FEATURES ·Drain Current †“ID= 12A@ TC=25℃ ·Drain Source Volta ge-
: VDSS= 650V (Min) ·Static Drain-S ource On-Resistance
: RDS(on) = 0. 85Ω( Max) ·Avalanche Energy Specified ·Fas t Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi ciency switch mode power supply. ·ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Dra in-Source Voltage Gate-Source Voltage-C ontinuous 650 ±30 V V ID Drain Curr ent-Continuous 12 A IDM Drain Current -Single Plused 48 A PD Total D . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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