INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N65
·FEATURES ·Drain Current –ID= 1...
INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
12N65
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V (Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
650 ±30
V V
ID Drain Current-Continuous
12 A
IDM Drain Current-Single Plused
48 A
PD Total Dissipation @TC=25℃
225 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
0.56 ℃/W 62.5 ℃/W
isc website: www.iscsemi.com
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
12N65
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID= 6.0A VGS= ±30V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
VSD Forward On-Voltage
IS= 12A; VGS= 0
MIN MAX UNIT 650 V
24V 0.85 Ω ±100 nA 1 μA 1.4 V
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