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2N6379 Datasheet, Equivalent, Power Transistors.Silicon PNP Power Transistors Silicon PNP Power Transistors |
| Part | 2N6379 |
|---|---|
| Description | Silicon PNP Power Transistors |
| Feature | INCHANGE Semiconductor
isc Silicon PNP P ower Transistors
isc Product Specifica tion
2N6379
DESCRIPTION ·Low Collecto r Saturation Voltage ·High DC Current Gain ·High Power Dissipation
APPLICAT IONS ·Designed for use in industrial-m ilitary power amplifier
and switching c ircuit application. ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Volt age -120 V VEBO Emitter-Base Voltag e -6 V IC Collector Current-Continuou s -50 A IB Base Current-Continuous - 20 A PC Collector Power Dissipation TJ Junction Temperatur . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2N6379 |
|---|---|
| Description | Silicon PNP Power Transistors |
| Feature | INCHANGE Semiconductor
isc Silicon PNP P ower Transistors
isc Product Specifica tion
2N6379
DESCRIPTION ·Low Collecto r Saturation Voltage ·High DC Current Gain ·High Power Dissipation
APPLICAT IONS ·Designed for use in industrial-m ilitary power amplifier
and switching c ircuit application. ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Volt age -120 V VEBO Emitter-Base Voltag e -6 V IC Collector Current-Continuou s -50 A IB Base Current-Continuous - 20 A PC Collector Power Dissipation TJ Junction Temperatur . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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