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2P6M

Inchange Semiconductor

Thyristors

INCHANGE Semiconductor isc Thyristors APPLICATIONS ·Electric blanket,electronic jar,various temper- ature control. ·Elec...


Inchange Semiconductor

2P6M

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Description
INCHANGE Semiconductor isc Thyristors APPLICATIONS ·Electric blanket,electronic jar,various temper- ature control. ·Electric sewing machine,speed control of mi- niature type motor. ·Light display equipment , lamp dimmer such as a display for entertainment. ·Automatic gas lighter, battery charger. ·Solid state static switches etc. isc Product Specification 2P6M ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current ITSM Surge non-repetitive on-state current PGM Peak gate power dissipation PG(AV) Average gate power dissipation IFGM Peak gate forward current VRGM Peak gate reverse voltage Tj Junction temperature MIN 600 (note:RGK=1kΩ) 600 (note:RGK=1kΩ) 2(Tc=77℃, θ=180°Single phase(1/2wave) 20 0.5 (f ≥50Hz, Duty ≤10%) 0.1 0.2 (f ≥50Hz, Duty ≤10%) 6 -40 to + 125 UNIT V V A A W W A V ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃,RGK=1kΩ IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃,RGK=1kΩ VTM On-state voltage ITM=4A IGT Gate-trigger current VDM=6V;RL=100Ω,RGK=1kΩ VGT Gate-trigger voltage VDM=6V;RL=100Ω,RGK=1kΩ VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ IH Holding current VD=24V; RGK=1kΩ,ITM=4A Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 100 μA 100 μA 1.8 V 100 μA 0.8 V 0.2 V 5 mA 10 ℃/W isc website:www.iscsemi.cn ...




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