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2SA1080 Dataheets PDF



Part Number 2SA1080
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet 2SA1080 Datasheet2SA1080 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC C.

  2SA1080   2SA1080


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isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1080 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -40 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1μA; IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1μA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -10mA; IB= -1mA -1.0 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 nA ICEO Collector Cutoff Current VCE= -40V; IB= 0 -500 nA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 nA hFE DC Current Gain IC= -10mA; VCE= -5V 100 350 COB Outut Capacitance IE= 0; VCB= -20V; f= 1.0MHz 65 pF fT Current-Gain—Bandwidth Product IC= -10mA;VCE= -10V; f=10MHz 30 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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