2SA1082

isc Silicon PNP Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -100 mA PD Collector Power Dissipation@TA=25℃ 400 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1082 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor 2SA1082 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CES Collector-Emitter Breakdown Voltage IC= -10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=-10mA ; IB= -1mA VBE(on) Base-Emitter On Voltage IC= -2mA ; VCE= -12V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -2V; IC= 0 hFE DC Current Gain IC=-2mA ; VCE= -12V fT Current-Gain—Bandwidth Product IC= -2mA; VCE= -12V; f= 1MHz Cob Output Capacitance VCB = −10 V, IE = 0, f =1.0MHz MIN TYP . MAX UNIT -120 V -120 V -5 V -0.2 V -0.6 V -0.1 μA -0.1 μA 250 800 90 MHz 3.5 pF  hFE Classifications D E 250-500 400-800 NOTICE： I...