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2SA651 Datasheet, Equivalent, PNP Transistor.Silicon PNP Transistor Silicon PNP Transistor |
　
　
　
| Part | 2SA651 |
|---|---|
| Description | Silicon PNP Transistor |
| Feature | isc Silicon PNP Power Transistor
2SA651
DESCRIPTION ·Collector-Emitter Break down Voltage-
: V(BR)CEO= -150V(Min. )  ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for audio power am plifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag e -200 V VCEO Collector-Emitter Volt age -150 V VEBO Emitter-Base Voltag e -5 V IC Collector Current-Continu ous PC Collector Power Dissipation @T C=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Ts . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SA651 |
|---|---|
| Description | Silicon PNP Transistor |
| Feature | isc Silicon PNP Power Transistor
2SA651
DESCRIPTION ·Collector-Emitter Break down Voltage-
: V(BR)CEO= -150V(Min. )  ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for audio power am plifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag e -200 V VCEO Collector-Emitter Volt age -150 V VEBO Emitter-Base Voltag e -5 V IC Collector Current-Continu ous PC Collector Power Dissipation @T C=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Ts . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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