DatasheetsPDF.com

2SA651 Datasheet, Equivalent, PNP Transistor.

Silicon PNP Transistor

Silicon PNP Transistor

 

 

 

Part 2SA651
Description Silicon PNP Transistor
Feature isc Silicon PNP Power Transistor 2SA651 DESCRIPTION ·Collector-Emitter Break down Voltage- : V(BR)CEO= -150V(Min.
) Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for audio power am plifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag e -200 V VCEO Collector-Emitter Volt age -150 V VEBO Emitter-Base Voltag e -5 V IC Collector Current-Continu ous PC Collector Power Dissipation @T C=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Ts .
Manufacture Inchange Semiconductor
Datasheet
Download 2SA651 Datasheet
Part 2SA651
Description Silicon PNP Transistor
Feature isc Silicon PNP Power Transistor 2SA651 DESCRIPTION ·Collector-Emitter Break down Voltage- : V(BR)CEO= -150V(Min.
) Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for audio power am plifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag e -200 V VCEO Collector-Emitter Volt age -150 V VEBO Emitter-Base Voltag e -5 V IC Collector Current-Continu ous PC Collector Power Dissipation @T C=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Ts .
Manufacture Inchange Semiconductor
Datasheet
Download 2SA651 Datasheet

2SA651

2SA651
2SA651

2SA651

Recommended third-party 2SA651 Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)