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2SB1531 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
| Part | 2SB1531 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor
2SB1531
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2. 5V(Max. )@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=2. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SB1531 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor
2SB1531
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2. 5V(Max. )@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=2. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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