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2SB874 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
| Part | 2SB874 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor
2SB874
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage
: VCE(sat)= -1. 0V(Max)@IC= -1. 5A ·Complement to Type 2SD1177 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SB874 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor
2SB874
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage
: VCE(sat)= -1. 0V(Max)@IC= -1. 5A ·Complement to Type 2SD1177 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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