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2SB897 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
| Part | 2SB897 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor
2SB897
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-
: VCE(sat) = -1. 5V(Max. ) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Colle. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SB897 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor
2SB897
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-
: VCE(sat) = -1. 5V(Max. ) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Colle. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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