2SB920

isc Silicon PNP Power Transistor 2SB920 DESCRIPTION ·High Collector Current:IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose large current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V  hFE-1 Classifications Q R S 70-140 100-200 140-280 2SB920 MIN TYP. MAX UNIT -80 V -...