| DatasheetsPDF.com |
2SB955 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
| Part | 2SB955 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor
2SB955
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1. 5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SB955 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor
2SB955
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1. 5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
|
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |