2SB955

isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -15 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -200mA, IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A, IB= -0.1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -5A, IB= -10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -10A, IB= -0.1A ICBO Collector Cutoff Current VCB= -120V, IE= 0 ICEO Collector Cutoff Current VCE= -100...