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2SC5463 Datasheet, Equivalent, RF Transistor.Silicon NPN RF Transistor Silicon NPN RF Transistor |
| Part | 2SC5463 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Feature | isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5463 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SC5463 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Feature | isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5463 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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