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3DD101A Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
| Part | 3DD101A |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor
DESCRI PTION ·Collector-Emitter Breakdown Vol tage-
: V(BR)CEO= 100V(Min. ) ·DC Curre nt Gain- : hFE= 20(Min. )@IC= 2A ·Colle ctor-Emitter Saturation Voltage- : VCE( sat)= 0. 8V(Max)@ IC= 2. 5A ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLI CATIONS ·Designed for power amplifier, DC-DC converter and regulated power sup ply applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL PARAMETER VALU E UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Cu . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 3DD101A |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor
DESCRI PTION ·Collector-Emitter Breakdown Vol tage-
: V(BR)CEO= 100V(Min. ) ·DC Curre nt Gain- : hFE= 20(Min. )@IC= 2A ·Colle ctor-Emitter Saturation Voltage- : VCE( sat)= 0. 8V(Max)@ IC= 2. 5A ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLI CATIONS ·Designed for power amplifier, DC-DC converter and regulated power sup ply applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL PARAMETER VALU E UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Cu . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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