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3DD102B Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
| Part | 3DD102B |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor
isc Silicon NPN P ower Transistor
isc Product Specificat ion
3DD102B
DESCRIPTION ·Collector-Em itter Breakdown Voltage-
: V(BR)CEO= 15 0V(Min. ) ·DC Current Gain- : hFE= 20(M in. )@IC= 2A ·Collector-Emitter Saturat ion Voltage- : VCE(sat)= 0. 8V(Max)@ IC= 2. 5A APPLICATIONS ·Designed for powe r amplifier,DC-DC converter and regulat ed power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR AMETER VALUE UNIT VCBO Collector-Ba se Voltage 200 V VCEO Collector-Emitt er Voltage 150 V VEBO Emitter-Base V oltage 4V IC Collector Current-Contin uous 5A PC Collect . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 3DD102B |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor
isc Silicon NPN P ower Transistor
isc Product Specificat ion
3DD102B
DESCRIPTION ·Collector-Em itter Breakdown Voltage-
: V(BR)CEO= 15 0V(Min. ) ·DC Current Gain- : hFE= 20(M in. )@IC= 2A ·Collector-Emitter Saturat ion Voltage- : VCE(sat)= 0. 8V(Max)@ IC= 2. 5A APPLICATIONS ·Designed for powe r amplifier,DC-DC converter and regulat ed power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR AMETER VALUE UNIT VCBO Collector-Ba se Voltage 200 V VCEO Collector-Emitt er Voltage 150 V VEBO Emitter-Base V oltage 4V IC Collector Current-Contin uous 5A PC Collect . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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