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3DD15B Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
　
　
　
| Part | 3DD15B |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor
3DD15B
DESCRIPTION ·Collector-Emitter Break down Voltage-
: V(BR)CEO= 100V(Min. ) · DC Current Gain- : hFE= 30~250(Min. )@IC = 2A ·Collector-Emitter Saturation Vol tage- : VCE(sat)= 1. 5V(Max)@ IC= 2. 5A  ·Minimum Lot-to-Lot variations for robu st device performance and reliable oper ation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C ollector-Base Voltage 150 V VCEO Co llector-Emitter Voltage 100 V VEBO Emitter-Base Voltage . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 3DD15B |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor
3DD15B
DESCRIPTION ·Collector-Emitter Break down Voltage-
: V(BR)CEO= 100V(Min. ) · DC Current Gain- : hFE= 30~250(Min. )@IC = 2A ·Collector-Emitter Saturation Vol tage- : VCE(sat)= 1. 5V(Max)@ IC= 2. 5A  ·Minimum Lot-to-Lot variations for robu st device performance and reliable oper ation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C ollector-Base Voltage 150 V VCEO Co llector-Emitter Voltage 100 V VEBO Emitter-Base Voltage . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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