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3DD15B Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part 3DD15B
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor 3DD15B DESCRIPTION ·Collector-Emitter Break down Voltage- : V(BR)CEO= 100V(Min.
) · DC Current Gain- : hFE= 30~250(Min.
)@IC = 2A ·Collector-Emitter Saturation Vol tage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A Minimum Lot-to-Lot variations for robu st device performance and reliable oper ation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C ollector-Base Voltage 150 V VCEO Co llector-Emitter Voltage 100 V VEBO Emitter-Base Voltage .
Manufacture Inchange Semiconductor
Datasheet
Download 3DD15B Datasheet
Part 3DD15B
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor 3DD15B DESCRIPTION ·Collector-Emitter Break down Voltage- : V(BR)CEO= 100V(Min.
) · DC Current Gain- : hFE= 30~250(Min.
)@IC = 2A ·Collector-Emitter Saturation Vol tage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A Minimum Lot-to-Lot variations for robu st device performance and reliable oper ation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C ollector-Base Voltage 150 V VCEO Co llector-Emitter Voltage 100 V VEBO Emitter-Base Voltage .
Manufacture Inchange Semiconductor
Datasheet
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3DD15B

3DD15B
3DD15B

3DD15B

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