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3DD4515 Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
Part | 3DD4515 |
---|---|
Description | Silicon NPN Power Transistor |
Feature | isc Silicon NPN Power Transistor
3DD451 5
DESCRIPTION ·Collector-Emitter Brea kdown Voltage-
: V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage-
: VCE(sat)= 1. 0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for power amplifie r,high speed switching and regulated po wer supply applications. ABSOLUTE MAXI MUM RATINGS(Ta=25℃) SYMBOL PARAMETE R VALUE UNIT VCBO Collector-Base Vo ltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol tage 9 V IC Collector Current-Conti nuous PC Collector . |
Manufacture | Inchange Semiconductor |
Datasheet |
Part | 3DD4515 |
---|---|
Description | Silicon NPN Power Transistor |
Feature | isc Silicon NPN Power Transistor
3DD451 5
DESCRIPTION ·Collector-Emitter Brea kdown Voltage-
: V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage-
: VCE(sat)= 1. 0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for power amplifie r,high speed switching and regulated po wer supply applications. ABSOLUTE MAXI MUM RATINGS(Ta=25℃) SYMBOL PARAMETE R VALUE UNIT VCBO Collector-Base Vo ltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol tage 9 V IC Collector Current-Conti nuous PC Collector . |
Manufacture | Inchange Semiconductor |
Datasheet |
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