isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·F...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
Regulators ·DC-DC Converter, ·Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
8.5
A
ID(puls)
Pulsed Drain Current
34
A
Ptot
Total Dissipation@TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
4.16 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
2SK2350
isc website:www.iscsemi.cn
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isc N-Channel Mosfet
Transistor
2SK2350
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS=10A ;VGS= 0 VGS= 10V; ID= 5A VGS= ±16V;VDS= 0 VDS= 200V; VGS= 0 VDS=10V; VGS=0V; fT=1MH...