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2SK2350 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK2350 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIP TION ·Drain Current ID= 8. 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(M in) ·Fast Switching Speed ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation APPL ICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE M AXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETE R VALUE UNIT VDSS Drain-Source Volta ge (VGS=0) 200 V VGS Gate-Source Vo ltage ±30 V ID Drain Current-conti nuous@ TC=25℃ 8. 5 A ID(puls) Puls ed Drain Current 34 A Ptot Total Di ssipation@TC=25℃ 30 W Tj Max. Ope rating Junction Temperature 1 . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK2350 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIP TION ·Drain Current ID= 8. 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(M in) ·Fast Switching Speed ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation APPL ICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE M AXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETE R VALUE UNIT VDSS Drain-Source Volta ge (VGS=0) 200 V VGS Gate-Source Vo ltage ±30 V ID Drain Current-conti nuous@ TC=25℃ 8. 5 A ID(puls) Puls ed Drain Current 34 A Ptot Total Di ssipation@TC=25℃ 30 W Tj Max. Ope rating Junction Temperature 1 . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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