N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C164FP Issued Date : 2015.03.04 Revised Date : Page No. : 1/9
N-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C164FP Issued Date : 2015.03.04 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN12N60BFP
BVDSS :600V RDS(ON) : 0.46Ω typ.
ID : 12A
Description
The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
Applications
Ballast Inverter
Ordering Information
Device MTN12N60BFP-0-UB-S
Package
TO-220FP (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN12N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C164FP Issued Date : 2015.03.04 Revised Date : Page No. : 2/9
Symbol
Outline
MTN12N60BFP
TO-220FP
G:Gate D:Drain S:Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy (Note 3)
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