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MTN12N60E3 Dataheets PDF



Part Number MTN12N60E3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN12N60E3 DatasheetMTN12N60E3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN12N60E3 BVDSS :660V @Tj=150°C RDS(ON) : 0.65Ω ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Feature.

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CYStech Electronics Corp. Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN12N60E3 BVDSS :660V @Tj=150°C RDS(ON) : 0.65Ω ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=660V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Ballast • Inverter Symbol MTN12N60E3 Outline TO-220 G:Gate D:Drain S:Source MTN12N60E3 GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg Limits 600 ±30 12 7.2 48 870 12 22.5 3.5 300 225 1.78 -55~+150 Unit V V A A A mJ A mJ V/ns °C W W/°C °C Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=12A, dI/dt<100A/μs, VDD


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