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MTN12N60E3 Datasheet, Equivalent, Power MOSFET.N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET |
| Part | MTN12N60E3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | CYStech Electronics Corp. Spec. No. : C 743E3 Issued Date : 2009. 10. 08 Revised Date : Page No. : 1/8 N-Channel Enhanc ement Mode Power MOSFET MTN12N60E3 BVD SS :660V @Tj=150°C RDS(ON) : 0. 65Ω ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, pro viding the designer with the best combi nation of fast switching, ruggedized de vice design, low on-resistance and cost effectiveness. The TO-220 package is u niversally preferred for all commercial -industrial applications Features • BVDSS=660V typically @ Tj=150℃ • Lo w On Resistance • Simple Drive Requir ement • Low Gate Charge . |
| Manufacture | CYStech |
| Datasheet |
| Part | MTN12N60E3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | CYStech Electronics Corp. Spec. No. : C 743E3 Issued Date : 2009. 10. 08 Revised Date : Page No. : 1/8 N-Channel Enhanc ement Mode Power MOSFET MTN12N60E3 BVD SS :660V @Tj=150°C RDS(ON) : 0. 65Ω ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, pro viding the designer with the best combi nation of fast switching, ruggedized de vice design, low on-resistance and cost effectiveness. The TO-220 package is u niversally preferred for all commercial -industrial applications Features • BVDSS=660V typically @ Tj=150℃ • Lo w On Resistance • Simple Drive Requir ement • Low Gate Charge . |
| Manufacture | CYStech |
| Datasheet |
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