CYStech Electronics Corp.
Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTN12N60E3
BVDSS :660V @Tj=150°C RDS(ON) : 0.65Ω ID : 12A
Description
The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=660V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Ballast • Inverter
Symbol
MTN12N60E3
Outline
TO-220
G:Gate D:Drain S:Source
MTN12N60E3
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 2/8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 4)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
Symbol
VDS VGS ID ID IDM EAS IAR EAR dv/dt
TL
PD
Tj, Tstg
Limits
600 ±30 12 7.2 48 870 12 22.5 3.5
300
225 1.78 -55~+150
Unit
V V A A A mJ A mJ V/ns
°C
W W/°C
°C
Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=12A, dI/dt<100A/μs, VDD