MTN1322S3

CYStech Electronics Corp. Spec. No. : C596S3 Issued Date : 2009.11.20 Revised Date : 2013.09.09 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN1322S3 BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V,ID=400mA RDSON@VGS=1.8V,ID=350mA 25V 850mA 300mΩ(typ) 450mΩ(typ) 870mΩ(typ) Features Simple drive requirement Small package outline Pb-free package Symbol MTN1322S3 Outline SOT-323 D G：Gate S：Source D：Drain GS Ordering Information Device MTN1322S3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTN1322S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C596S3 Issued Date : 2009.11.20 Revised Date : 2013.09.09 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor ESD susceptibility Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10 seconds 4. Human body model, 1.5kΩ in series with 100pF Limits 25 ±8 850 680 3.5 0.35 0.003 2000 (Note 4) -55~+150 Unit V V mA mA A W W/°C V °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) No...